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| Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 1, 4/2008 Heterostructure Field Effect Transistor (GaAs HFET) Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 250 to 4000 MHz such as Cellular, PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 250 to 4000 MHz * P1dB: 22.5 dBm @ 900 MHz * Small - Signal Gain: 12 dB @ 900 MHz * Third Order Output Intercept Point: 44 dBm @ 900 MHz * Single 5 Volt Supply * Internally Prematched to 50 Ohms * Internally Biased * Low Cost SOT - 89 Surface Mount Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. MMH3111NT1 250 - 4000 MHz, 12 dB 22.5 dBm GaAs HFET 12 3 CASE 1514 - 02, STYLE 2 SOT - 89 PLASTIC Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 12 - 14 - 14 22.5 44 2140 MHz 11.3 - 15 - 19 22 44 3500 MHz 10 - 16 - 14 22 42 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VDD IDD Pin Tstg TJ Value 6 300 10 - 65 to +150 150 Unit V mA dBm C C 2. For reliable operation, the junction temperature should not exceed 150C. 1. VDD = 5 Vdc, TC = 25C, 50 ohm system Table 3. Thermal Characteristics (VDD = 5 Vdc, IDD = 150 mA, TC = 25C) Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 37.5 Unit C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved. MMH3111NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VDD = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF IDD VDD Min 11 -- -- -- -- -- 120 -- Typ 12 - 14 - 14 22.5 44 3.2 150 5 Max -- -- -- -- -- -- 190 -- Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150C. MMH3111NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C MMH3111NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 20 Gp, SMALL-SIGNAL GAIN (dB) 0 S11 -10 S11, S22 (dB) 15 S22 -20 -40C 10 TC = 85C 25C -30 VDD = 5 Vdc VDD = 5 Vdc IDD = 150 mA 4 -40 0 1 2 f, FREQUENCY (GHz) 3 4 5 0 1 2 f, FREQUENCY (GHz) 3 Figure 2. Small - Signal Gain (S21) versus Frequency 13 P1dB, 1 dB COMPRESSION POINT (dBm) 900 MHz 1960 MHz 11 2600 MHz 10 3500 MHz 9 2140 MHz VDD = 5 Vdc IDD = 150 mA 24 23 22 21 20 19 18 17 16 12 14 16 18 20 22 24 Figure 3. Input/Output Loss versus Frequency Gp, SMALL-SIGNAL GAIN (dB) 12 VDD = 5 Vdc IDD = 150 mA 0.5 1 1.5 2 2.5 3 3.5 8 10 Pout, OUTPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 160 140 IDD, DRAIN CURRENT (mA) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VDD, DRAIN VOLTAGE (V) 50 48 46 44 42 40 38 36 0 Figure 5. P1dB versus Frequency VDD = 5 Vdc, IDD = 150 mA, 10 dBm per Tone Two-Tone Measurements, 1 MHz Tone Spacing 1 2 f, FREQUENCY (GHz) 3 4 Figure 6. Drain Current versus Drain Voltage Figure 7. Third Order Output Intercept Point versus Frequency MMH3111NT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 47 45 43 41 39 37 35 4 4.2 4.4 4.6 4.8 5 VDD, DRAIN VOLTAGE (V) f = 900 MHz, 10 dBm per tone Two-Tone Measurements, 1 MHz Tone Spacing IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 48 VDD = 5 Vdc, f = 900 MHz, 10 dBm per Tone Two-Tone Measurements, 1 MHz Tone Spacing 47 46 45 44 43 -40 -20 0 20 40 60 80 100 T, TEMPERATURE (_C) Figure 8. Third Order Output Intercept Point versus Drain Voltage -25 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50 -55 -60 -65 -70 10 12 14 Pout, OUTPUT POWER (dBm) 16 18 104 120 VDD = 5 Vdc IDD = 150 mA f = 900 MHz 1 MHz Tone Spacing 106 Figure 9. Third Order Output Intercept Point versus Case Temperature MTTF (YEARS) 105 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VDD = 5 Vdc, IDD = 150 mA Figure 10. Third Order Intermodulation versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 11. MTTF versus Junction Temperature -30 VDD = 5 Vdc, IDD = 150 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 8 NF, NOISE FIGURE (dB) 6 -40 4 -50 2 VDD = 5 Vdc IDD = 150 mA 0 0 1 2 f, FREQUENCY (GHz) 3 4 -60 -70 9 10 11 12 13 14 15 16 17 18 19 Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMH3111NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 800- 1900 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 C5 Z3 Z4 Z5 Z6 C2 Z7 C6 Z8 RF OUTPUT VCC L2 Z1 Z2 Z3 Z4 Z5 0.347 0.068 0.418 0.089 0.172 x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip Z6 Z7 Z8 PCB 0.403 x 0.058 Microstrip 0.086 x 0.058 Microstrip 0.261 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 20 S21 10 S21, S11, S22 (dB) 0 -10 -20 -30 -40 600 VDD = 5 Vdc IDD = 150 mA 800 1000 1200 1400 1600 1800 2000 S11 S22 C1 C5 L2 L1 R1 C4 C3 C2 C6 MMG30XX Rev 2 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 C5 C6 L1 L2 R1 Description 47 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 0.7 pF Chip Capacitor 0.4 pF Chip Capacitor 56 nH Chip Inductor 12 nH Chip Inductor 0 W, 1/10 W Chip Resistor Part Number 06035J470BBS C0603C104J5RAC C0603C105J5RAC 06035J0R7BBS 12105J0R4BBS HK160856NJ - T HK160812NJ - T CRCW06030000FKEA Manufacturer AVX Kemet Kemet AVX AVX Taiyo Yuden Taiyo Yuden Vishay MMH3111NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1900- 2200 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 C5 Z3 Z4 Z5 C2 Z6 C6 Z7 RF OUTPUT VCC Z1 Z2 Z3 Z4 0.347 0.068 0.507 0.172 x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip Z5 Z6 Z7 PCB 0.403 x 0.058 Microstrip 0.086 x 0.058 Microstrip 0.261 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 S21 10 S21, S11, S22 (dB) R1 C4 C3 L1 C5 0 C1 C2 C6 -10 S11 -20 S22 -30 1800 1900 2000 2100 VDD = 5 Vdc IDD = 150 mA 2200 2300 MMG30XX Rev 2 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 C5 C6 L1 R1 Description 0.01 F Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 0.7 pF Chip Capacitor 0.4 pF Chip Capacitor 56 nH Chip Inductor 0 W, 1/10 W Chip Resistor Part Number 06035J470BBS C0603C104J5RAC C0603C105J5RAC 06035J0R7BBS 12105J0R4BBS HK160856NJ - T CRCW06030000FKEA Manufacturer AVX Kemet Kemet AVX AVX Taiyo Yuden Vishay MMH3111NT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 2500 - 3800 MHz VSUPPLY R1 C3 L1 RF INPUT DUT C4 Z1 C1 Z2 C5 Z3 Z4 C6 Z5 Z6 Z7 PCB Z5 Z6 C2 Z7 RF OUTPUT VCC Z1 Z2 Z3 Z4 0.347 0.489 0.086 0.097 x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip x 0.058 Microstrip 0.075 x 0.058 Microstrip 0.403 x 0.058 Microstrip 0.347 x 0.058 Microstrip Getek Grade ML200C, 0.031, r = 4.1 Figure 20. 50 Ohm Test Circuit Schematic 20 S21 10 R1 S21, S11, S22 (dB) 0 S11 -10 -20 C5 -30 S22 -40 -50 2400 VDD = 5 Vdc IDD = 150 mA 3000 3300 3600 3900 C1 C6 L1 C4 C3 C2 MMG30XX Rev 2 2700 f, FREQUENCY (MHz) Figure 21. S21, S11 and S22 versus Frequency Figure 22. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 C5 C6 L1 R1 Description 2 pF Chip Capacitors 0.1 F Chip Capacitor 1 F Chip Capacitor 0.8 pF Chip Capacitor 0.4 pF Chip Capacitor 56 nH Chip Inductor 0 W, 1/10 W Chip Resistor Part Number 06035J2R0BBS C0603C104J5RAC C0603C105J5RAC 06035J0R8BBS 06035J0R4BBS HK160856NJ - T CRCW06030000FKEA Manufacturer AVX Kemet Kemet AVX AVX Taiyo Yuden Vishay MMH3111NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 11. Common Source S - Parameters (VDD = 5 Vdc, IDD = 150 mA, TC = 25C, 50 Ohm System) f MHz 100 150 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2160 2170 2180 2190 S11 |S11| 0.329 0.324 0.322 0.318 0.315 0.313 0.313 0.315 0.317 0.319 0.322 0.325 0.329 0.332 0.336 0.339 0.344 0.347 0.351 0.355 0.358 0.362 0.367 0.371 0.375 0.380 0.385 0.391 0.395 0.398 0.401 0.404 0.407 0.410 0.413 0.416 0.419 0.422 0.425 0.428 0.432 0.433 0.434 0.434 0.435 - 36.383 - 37.554 - 38.791 - 40.072 - 41.580 - 43.457 - 45.793 - 48.163 - 50.730 - 53.308 - 55.918 - 58.706 - 61.512 - 64.233 - 67.096 - 69.960 - 72.823 - 75.724 - 78.553 - 81.424 - 84.459 - 87.372 - 90.300 - 93.201 - 96.015 - 98.765 - 101.218 - 103.291 - 105.591 - 108.116 - 110.631 - 113.324 - 116.074 - 118.856 - 121.692 - 124.469 - 127.201 - 130.044 - 132.901 - 135.666 - 138.396 - 138.893 - 139.420 - 139.934 - 140.473 |S21| 4.365 4.337 4.313 4.288 4.266 4.239 4.217 4.196 4.175 4.154 4.136 4.116 4.098 4.078 4.059 4.040 4.019 4.001 3.983 3.964 3.944 3.924 3.903 3.883 3.861 3.837 3.815 3.793 3.773 3.752 3.731 3.710 3.691 3.672 3.654 3.633 3.613 3.592 3.570 3.547 3.525 3.519 3.515 3.509 3.506 S21 165.300 163.880 162.387 160.990 159.673 158.172 156.531 154.804 153.014 151.195 149.346 147.439 145.565 143.660 141.719 139.799 137.852 135.896 133.947 131.996 130.038 128.069 126.129 124.163 122.219 120.287 118.370 116.530 114.664 112.769 110.886 108.972 107.070 105.143 103.215 101.291 99.367 97.431 95.510 93.588 91.656 91.287 90.904 90.532 90.142 |S12| 0.116 0.116 0.116 0.116 0.116 0.116 0.116 0.116 0.117 0.117 0.117 0.117 0.117 0.117 0.117 0.117 0.117 0.117 0.118 0.118 0.118 0.118 0.118 0.118 0.118 0.118 0.118 0.118 0.119 0.119 0.119 0.119 0.119 0.119 0.119 0.119 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 S12 4.544 3.571 2.612 1.903 1.012 0.371 - 1.047 - 2.355 - 3.521 - 4.643 - 5.686 - 6.700 - 7.693 - 8.616 - 9.581 - 10.489 - 11.398 - 12.312 - 13.198 - 14.093 - 14.998 - 15.903 - 16.821 - 17.713 - 18.623 - 19.497 - 20.349 - 21.202 - 22.024 - 22.896 - 23.793 - 24.719 - 25.638 - 26.594 - 27.518 - 28.483 - 29.461 - 30.414 - 31.362 - 32.353 - 33.317 - 33.518 - 33.707 - 33.908 - 34.094 |S22| 0.161 0.154 0.147 0.143 0.137 0.133 0.130 0.129 0.129 0.129 0.129 0.129 0.130 0.131 0.132 0.132 0.133 0.133 0.133 0.132 0.131 0.131 0.129 0.128 0.126 0.124 0.123 0.123 0.123 0.122 0.121 0.120 0.118 0.117 0.115 0.113 0.111 0.110 0.108 0.106 0.104 0.104 0.103 0.103 0.103 S22 - 47.926 - 47.482 - 46.993 - 46.565 - 46.090 - 45.522 - 45.093 - 44.795 - 45.225 - 45.763 - 46.206 - 46.966 - 47.749 - 48.671 - 49.880 - 51.046 - 52.269 - 53.492 - 54.989 - 56.508 - 57.950 - 59.716 - 61.319 - 63.068 - 64.878 - 66.432 - 67.493 - 68.218 - 69.287 - 70.746 - 72.539 - 74.765 - 77.175 - 79.613 - 82.165 - 84.722 - 87.462 - 90.359 - 93.223 - 96.005 - 99.124 - 99.644 - 100.212 - 100.854 - 101.491 (continued) MMH3111NT1 RF Device Data Freescale Semiconductor 9 50 OHM TYPICAL CHARACTERISTICS Table 11. Common Source S - Parameters (VDD = 5 Vdc, IDD = 150 mA, TC = 25C, 50 Ohm System) (continued) f MHz 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 S11 |S11| 0.436 0.440 0.444 0.448 0.452 0.457 0.461 0.465 0.469 0.473 0.476 0.480 0.483 0.487 0.490 0.494 0.498 0.501 0.505 0.508 0.511 0.514 0.517 0.519 0.522 0.524 0.527 0.528 0.531 - 141.015 - 143.664 - 146.130 - 148.573 - 150.891 - 153.231 - 155.588 - 157.929 - 160.182 - 162.557 - 164.863 - 167.206 - 169.520 - 171.820 - 173.992 - 176.195 - 178.278 179.789 177.950 176.155 174.401 172.667 170.842 169.000 167.181 165.308 163.438 161.590 159.691 |S21| 3.502 3.480 3.456 3.433 3.408 3.384 3.360 3.337 3.312 3.290 3.268 3.246 3.223 3.201 3.180 3.157 3.136 3.114 3.092 3.071 3.051 3.031 3.010 2.990 2.970 2.950 2.930 2.911 2.892 S21 89.764 87.853 85.964 84.098 82.262 80.399 78.562 76.708 74.886 73.042 71.221 69.393 67.572 65.747 63.945 62.155 60.357 58.599 56.836 55.112 53.377 51.656 49.907 48.184 46.458 44.716 43.003 41.291 39.560 |S12| 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 0.120 S12 - 34.293 - 35.279 - 36.278 - 37.227 - 38.193 - 39.165 - 40.131 - 41.119 - 42.109 - 43.087 - 44.100 - 45.119 - 46.143 - 47.132 - 48.134 - 49.132 - 50.131 - 51.092 - 52.074 - 53.076 - 54.062 - 55.020 - 55.996 - 56.970 - 57.975 - 59.010 - 60.024 - 61.051 - 62.060 |S22| 0.102 0.100 0.099 0.097 0.094 0.093 0.091 0.090 0.089 0.088 0.088 0.087 0.087 0.086 0.086 0.085 0.085 0.085 0.084 0.085 0.085 0.085 0.086 0.087 0.087 0.089 0.090 0.093 0.095 S22 - 102.102 - 105.319 - 108.673 - 111.868 - 115.093 - 118.343 - 121.666 - 125.028 - 128.277 - 131.582 - 134.657 - 137.722 - 140.631 - 143.444 - 146.347 - 149.433 - 152.745 - 156.274 - 160.030 - 163.912 - 167.662 - 171.336 - 175.010 - 178.505 177.850 174.447 170.925 167.846 164.966 MMH3111NT1 10 RF Device Data Freescale Semiconductor 1.7 7.62 0.305 diameter 3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.49 2.54 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 23. Recommended Mounting Configuration MMH3111NT1 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MMH3111NT1 12 RF Device Data Freescale Semiconductor MMH3111NT1 RF Device Data Freescale Semiconductor 13 MMH3111NT1 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Nov. 2007 Apr. 2008 * Initial Release of Data Sheet * Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 * Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 Description * Updated Part Numbers in Tables 8, 9, 10, Component Designations and Values, to latest RoHS compliant part numbers, p. 6, 7, 8 MMH3111NT1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MMH3111NT1 Rev. 16 1, 4/2008 Document Number: MMH3111NT1 RF Device Data Freescale Semiconductor |
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